Si Front-End Processing: Volume 669 : Physics and Technology of Dopant-Defect Interactions III (9781558996052)

This book focuses on the phenomena which control the three-dimensional dopant profile in deep submicron devices. As device sizes continue to shrink, increasing the dopant activation while simultaneously decreasing the junction depth requires increasing control and understanding of dopant movement. As dopant diffusion and activation are determined by interactions with defects, other atoms, and interfaces, control of dopant behavior requires specific knowledge of these processes. To take advantage of atomistic simulation methods that can be used to model not only the dopant behaviors but now the properties of whole devices, high-precision advanced characterization techniques (e.g., two-dimensional junction profiling) are essential. These problems provide an excellent opportunity for researchers to share experimental results and physical models, demonstrate their importance to the technologies and identify key issues for future research in this field. Topics include: future device issues; advances in dopant profiling; dopant diffusion issues; dopant-defect clustering; dopant impurity effects; laser annealing; advances in RTA and simulation and modeling.

Product details

• Format Hardback | 358 pages
• Dimensions 152 x 229 x 21mm | 650g
• Publication date 14 Dec 2001
• Publisher Materials Research Society
• Publication City/Country New York, United States
• Language English
• Illustrations note Worked examples or Exercises
• ISBN10 1558996052
• ISBN13 9781558996052

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